ECE441 - Spring 2009

Location: 260 Everitt Lab

Time: 11:00-11:50am

Credits: 3 hours

Instructor: Professor Leburton - jleburto@uiuc.edu

Office: Beckman Institute - 3251

Phone: 333-6813

Office Hour: Wednesday 2-3pm

Teaching Assistant: Mueen Nawaz - nawaz@uiuc.edu

Office: Beckman Institute 3249

Phone: 244-1964 (much easier to contact him via email).

TA Office Hour: Thursday 2-3pm. Location: On one of the bridges on the 3rd floor of Beckman Institute. If you cannot find me there, check in the office.

Course Description:

Detailed presentation of advanced concepts such as generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices.

Prerequisite: ECE440

Scores breakdown: 250 points for the final exam, 100 points for the homework, and 150 points for the midterm exam.

Homework

Lecture Notes

TCAD

TCAD Tutorial

pn_des.cmd.txt (Right click and save the file, and rename it to pn_des.cmd).

We will meet at the regular class time on Wednesday, the 25th of February 2009 at GL 57 (Grainger basement).

Exams

Note: All exams are closed books, closed notes, and no calculators are allowed.

Midterm Exam: March 18th, 2009. Sample midterm

Midterm Solution.

Final Exam: Tuesday, May 12th, 7-10pm (in the usual classroom)

Topics for the final exam.

Sample final.

Sample final solution.